RU6888M Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU6888M
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/62A,
RDS (ON) =7mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN 5X6
Applications
• Power Management.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2011
N-Channel MOSFET
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_A=25°C
T_A=70°C
T_C=25°C
T_C=100°C
T_A=25°C
T_A=70°C
Rating
Unit
60
V
±25
150
°C
-55 to 150
°C
①
50
A
②
240
A
①
62
A
40
③
16
③
13
62.5
W
25
③
4.2
③
2.7
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