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RU6581L Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU6581L
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠65V/81A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
⢠Super High Dense Cell Design
⢠Ultra Low On-Resistance
⢠100% avalanche tested
⢠Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-252
Applications
⢠Switching Application Systems
⢠UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
â¢
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. Aâ JUL., 2012
Rating
65
±25
175
-55 to 175
â
81
â¡
324
â
81
52
96
48
1.55
Unit
V
°C
°C
A
A
A
W
W
°C/W
169
mJ
www.ruichips.com
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