|
RU60E5D Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
|
RU60E5D
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠60V/5A,
RDS (ON) =58m⦠(Type) @ VGS=10V
RDS (ON) =70m⦠(Type) @ VGS=4.5V
⢠ESD Protected
⢠Reliable and Rugged
⢠Ultra Low On-Resistance
⢠100% avalanche tested
⢠Lead Free and Green Available
Pin Description
SOT-223
Applications
⢠Power Management
⢠DC-DC Converter
⢠Motor Control
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current
TC=25°C
TC=70°C
PD
â¡
RθJA
Maximum Power Dissipation
TC=25°C
TC=70°C
Thermal Resistance-Junction to Ambient
Rating
60
±20
150
-55 to 150
5
20
â
5
4
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B â APR., 2011
www.ruichips.com
|
▷ |