RU60C20R5 Datasheet, PDF (1/10 Pages) Ruichips Semiconductor Co., Ltd – Complementary Advanced Power MOSFET

RU60C20R5
Complementary Advanced Power MOSFET
Features
• N-Channel
60V/20A,
R_{DS (ON)} =30mΩ(Typ.) @ V_GS=10V
• P-Channel
-60V/-15A,
R_{DS (ON)} =110mΩ (Typ.) @ V_GS=-10V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Applications
• Power Management
Pin Description
D1/D2
S2G2
G1S1
TO220-5
D2/D1
G2
G1
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
V_GSS
T_J
T_STG
I_S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=±10V)
P_D
Maximum Power Dissipation
R_JC
Thermal Resistance-Junction to Case
R_JA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
S2
S1
Complementary MOSFET
N-Channel P-Channel Unit
60
-60
V
±16
±16
175
175
°C
-55 to 175 -55 to 175 °C
T_C=25°C
20
-15
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
80
20
16
50
25
3
62.5
-60
A
-15
A
-10
50
W
25
3
°C/W
62.5
°C/W
42
72
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
1
www.ruichips.com