RU6099S Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

Features
• 60V/120A,
RDS _(ON) =6m(Typ.) @V_GS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• Inverter Systems
RU6099S
N-Channel Advanced Power MOSFET
Pin Description
D
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
60
V
±25
175
°C
-55 to 175 °C
120
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
380
A
120
A
90
150
W
75
1
°C/W
62.5
°C/W
625
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
1
www.ruichips.com