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RU6080L Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU6080L
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠60V/80A,
RDS (ON) =7mΩ(tpy.)@VGS=10V
⢠Super High Dense Cell Design
⢠100% avalanche tested
⢠Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-252
Applications
⢠SMPS
⢠High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current
TC=25°C
TC=100°C
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
â¢
EAS
Avalanche Energy, Single Pulsed
Copyright© Ruichips Semiconductor Co., Ltd
Rev. Aâ APR., 2011
Rating
60
±25
175
-55 to 175
â¡
80
â
310
â¡
80
65
125
63
1.2
Unit
V
°C
°C
A
A
A
W
W
°C/W
225
mJ
www.ruichips.com
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