RU6055R Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET9

Features
• 60V/60A,
RDS (ON) =9mΩ (Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Fast Switching
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free,RoHS compliant
RU6055R
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220
Applications
• Switching Application Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2012
Rating
60
±25
175
-55 to 175
60
①
240
②
60
②
46
111
56
1.35
Unit
V
°C
°C
A
A
A
W
°C/W
324
mJ
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