RU6051K Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU6051K
N-Channel Advanced Power MOSFET
Features
• 60V/50A,
R_{DS (ON)} =10mΩ(Typ.)@V_GS=10V
R_{DS (ON)} =12mΩ(Typ.)@V_GS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters and Off-line UPS
Pin Description
GDS
TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
V_GSS
T_J
T_STG
I_S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_JC
Thermal Resistance-Junction to Case
R_JA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
1
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
60
V
±20
175
°C
-55 to 175 °C
50
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
200
A
50
A
36
71
W
36
2.1
°C/W
100
°C/W
100
mJ
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