RU5H5R Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Super High Dense Cell Design

RU5H5R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 500V/5A,
RDS (ON) =1.2Ω(Typ.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
Pin Description
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• High efficiency switch mode power
supplies
• Lighting
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_C=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
Rating
500
±30
150
-55 to 150
①
5
②
20
①
5
3.5
78
31
1.6
Unit
V
°C
°C
A
A
A
W
W
°C/W
40
mJ
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