RU5H5P Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU5H5P
N-Channel Advanced Power MOSFET
Features
• 500V/5A,
R_{DS (ON)} =1200mΩ(Typ.)@V_GS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High efficiency switch mode power supplies
• Lighting
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2013
1
GDS
TO220F
D
G
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
500
V
±30
150
°C
-55 to 150 °C
5
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
20
A
5
A
3.5
25
W
10
5
°C/W
62.5
°C/W
180
mJ
www.ruichips.com