RU55L18R Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET Super High Dense Cell Design

RU55L18R
P-Channel Advanced Power MOSFET
MOSFET
Features
• -60V/-16A,
RDS (ON) =100mΩ(Typ.)@VGS=-10V
RDS (ON) =125mΩ(Typ.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management
• Load Switch
• DC/DC Converter
Absolute Maximum Ratings
Pin Description
TO-220
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Rating
-60
±20
175
-55 to 175
-16
①
-64
-16
-11
54
27
2.8
72
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2012
www.ruichips.com