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RU55200Q Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU55200Q
N-Channel Advanced Power MOSFET
Features
⢠55V/200A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V
⢠Ultra Low On-Resistance
⢠Fast Switching and Fully Avalanche Rated
⢠100% avalanche tested
⢠175°C Operating Temperature
⢠Lead Free and Green Devices Available (RoHS Compliant)
Applications
⢠High Efficiency Synchronous Rectification in SMPS
⢠High Speed Power Switching
⢠Power Supply
Pin Description
G
DS
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
IDâ¡
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EASâ¢
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
55
V
±25
175
°C
-55 to 175 °C
200
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
800
A
200
A
142
326
W
163
0.46
°C/W
50
°C/W
625
mJ
Ruichips Semiconductor Co., Ltd
Rev. Aâ JUL., 2013
1
www.ruichips.com
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