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RU4H10R Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Gate charge minimized | |||
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Features
⢠400V/10A,
RDS (ON) =0.45⦠(Typ.) @ VGS=10V
⢠Gate charge minimized
⢠Low Crss( Typ. 23pF)
⢠Extremely high dv/dt capability
⢠100% avalanche tested
⢠Lead Free and Green Available
RU4H10R
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
TO-220
Applications
⢠High efficiency switch mode power
supplies
⢠Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
â¡
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A â MAY., 2012
Rating
400
±30
150
-55 to 150
10
â
40
â
10
â
6.4
114
45
1.1
98
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
www.ruichips.com
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