|
RU40120M Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
|
RU40120M
N-Channel Advanced Power MOSFET
Features
⢠40V/120A,
RDS (ON) =2.7mΩ(Typ.)@VGS=10V
⢠Super High Dense Cell Design
⢠Ultra Low On-Resistance
⢠Fast Switching Speed
⢠100% avalanche tested
⢠Lead Free and Green Devices Available (RoHS Compliant)
Applications
⢠DC/DC Converters
⢠Power Supply
Pin Description
D D DD
SSS G
PIN1
PDFN5060
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
IDâ¡
Continuous Drain Current@TA(VGS=10V)â¢
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TAâ¢
S
N-Channel MOSFET
Rating
Unit
TC=25°C
40
V
±20
150
°C
-55 to 150 °C
50
A
TC=25°C
480
A
TC=25°C
120
TC=100°C
75
A
TA=25°C
21
TA=70°C
17
TC=25°C
96
TC=100°C
38
W
TA=25°C
4.2
TA=70°C
2.7
Ruichips Semiconductor Co., Ltd
Rev. Aâ NOV., 2013
1
www.ruichips.com
|
▷ |