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RU3520H Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU3520H
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠40V/9A,
RDS (ON) =14m⦠(Type) @ VGS=10V
RDS (ON) =21m⦠(Type) @ VGS=4.5V
⢠Super High Dense Cell Design
⢠Reliable and Rugged
⢠100% avalanche tested
⢠Lead Free and Green Available
Pin Description
SOP-8
Applications
⢠High Frequency Buck Converters for
Computer Processor Power.
â¢High Frequency Isolated DC-DC
Converters.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current
TC=25°C
TC=70°C
PD
â¡
RθJA
Maximum Power Dissipation
TC=25°C
TC=70°C
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
â¢
EAS
Avalanche Energy, Single Pulsed
Rating
40
±20
150
-55 to 150
9
â
36
9
7.3
2.5
1.6
50
100
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. Bâ MAR., 2011
www.ruichips.com
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