RU35122R Datasheet, PDF (1/12 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU35122R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/120A,
RDS (ON) =2.7mΩ (Type) @ VGS=10V,I_DS=60A
• Ultra Low On-Resistance
• Fast Switching
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free,RoHS compliant
Pin Description
TO-220
TO-263
TO-220F
TO-247
Applications
• Switching Application Systems
• UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2011
Rating
40
±20
175
-55 to 175
120
①
480
②
120
②
100
180
90
0.8
Unit
V
°C
°C
A
A
A
W
°C/W
1260
mJ
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