RU30P4H Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU30P4H
P-Channel Advanced Power MOSFET
Features
• -30V/-5A,
R_{DS (ON)} =50mΩ(Typ.)@V_GS=-10V
R_{DS (ON)} =80mΩ(Typ.)@V_GS=-4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Power management
•Load switch
•Battery protection
Pin Description
D
D
D
D
G
S
S
pin1
S
SOP-8
DDDD
(8)(7)(6)(5)
G(4)
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
(1) (2)(3)
SSS
P-Channel MOSFET
Rating
Unit
T_A=25°C
-30
V
±20
150
°C
-55 to 150 °C
-2.7
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
-20
A
-5
A
-3.2
2.5
W
1.6
25
°C/W
50
°C/W
-
mJ
Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2013
1
www.ruichips.com