RU30P4C6 Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU30P4C6
P-Channel Advanced Power MOSFET
Features
• -30V/-4A,
R_{DS (ON)} =50mΩ(Typ.)@V_GS=-10V
R_{DS (ON)} =75mΩ(Typ.)@V_GS=-4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
•DC/DC Converter
Pin Description
S
D
D
G
D
D
SOT23-6
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
T_A=25°C
-30
V
±20
150
°C
-55 to 150 °C
-1.2
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
-16
A
-4
A
-3.2
1.3
W
0.8
-
°C/W
100
°C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
1
www.ruichips.com