RU30P4B Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU30P4B
P-Channel Advanced Power MOSFET
Features
• -25V/-4A,
R_{DS (ON)} =50mΩ(Typ.)@V_GS=-10V
R_{DS (ON)} =60mΩ(Typ.)@V_GS=-4.5V
R_{DS (ON)} =80mΩ(Typ.)@V_GS=-2.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
Pin Description
D
G
S
SOT23
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
T_A=25°C
-25
V
±16
150
°C
-55 to 150 °C
-1.25
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
-16
A
-4
A
-3.2
1
W
0.64
-
°C/W
125
°C/W
-
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com