RU30L30M Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET Super High Dense Cell Design

RU30L30M
P-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-30A,
RDS (ON) =12mΩ(Typ.)@VGS=-10V
RDS (ON) =20mΩ(Typ.)@VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN3333
Applications
• Power Management
• Load Switching
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_A=25°C
T_A=70°C
T_C=25°C
T_C=100°C
T_A=25°C
T_A=70°C
Rating
-30
±20
150
-55 to 150
①
-30
②
-96
①
-30
①
-19
③
-9.3
③
-7.5
33
13
③
3.5
③
2.3
Unit
V
°C
°C
A
A
A
W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
www.ruichips.com