RU30E60M2 Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU30E60M2
N-Channel Advanced Power MOSFET
Features
• 30V/60A,
R_{DS (ON)} =3mΩ(Typ.)@V_GS=10V
R_{DS (ON)} =6mΩ(Typ.)@V_GS=4.5V
• Super High Dense Cell Design
• Ulta Low On-Resistance
• ESD Protected(Rating 4KV HBM)
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Switching Application Systems
Pin Description
D ^{D DD}
SSS ^G
PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
Continuous Drain Current@T_C(V_GS=10V)
I_D^②
Continuous Drain Current@T_A(V_GS=10V)^③
Maximum Power Dissipation@T_C
P_D
Maximum Power Dissipation@T_A^③
Ruichips Semiconductor Co., Ltd
Rev. B– JAN., 2014
1
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
30
V
±20
150
°C
-55 to 150 °C
60
A
T_C=25°C
240
A
T_C=25°C
60
T_C=100°C
38
A
T_A=25°C
21
T_A=70°C
17
T_C=25°C
43
T_C=100°C
17
W
T_A=25°C
3.5
T_A=70°C
2.3
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