RU30C8H Datasheet, PDF (1/10 Pages) Ruichips Semiconductor Co., Ltd – Complementary Advanced Power MOSFET

RU30C8H
Complementary Advanced Power MOSFET
Features
• N-Channel
30V/8A,
R_{DS (ON)} =12mΩ(Typ.) @ V_GS=10V
R_{DS (ON)} =16mΩ(Typ.) @ V_GS=4.5V
• P-Channel
-30V/-7A,
R_{DS (ON)} =18mΩ (Typ.) @ V_GS=-10V
R_{DS (ON)} =25mΩ (Typ.) @ V_GS=-4.5V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
Pin Description
D2
D2
D1
D1
G2
S2
G1
pin1
S1
SOP-8
D1
D2
G1
G2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=±10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
S1
S2
Complementary MOSFET
N-Channel P-Channel Unit
30
-30
V
±12
±12
150
150
°C
-55 to 150 -55 to 150 °C
T_A=25°C
2.7
-2.5
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
32
8
6.5
2
1.3
TBD
62.5
-28
-7
-5.6
2
1.3
TBD
62.5
A
A
W
°C/W
°C/W
TBD
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com