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RU3090M Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU3090M
N-Channel Advanced Power MOSFET
Features
⢠30V/98A,
RDS (ON) =1.7mΩ(Typ.)@VGS=10V
RDS (ON) =3.2mΩ(Typ.)@VGS=4.5V
⢠Super High Dense Cell Design
⢠Reliable and Rugged
⢠100% avalanche tested
⢠Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
PDFN5060
Applications
⢠DC/DC Conversion
⢠Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
Copyrightï Ruichips Semiconductor Co., Ltd
Rev. Aâ APR., 2012
N-Channel MOSFET
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
Rating
Unit
30
V
±20
150
°C
-55 to 150
°C
50
A
â¡
380
A
â
98
A
â
68
â¢
29
â¢
23
66
26
W
â¢
4.2
â¢
2.7
www.ruichips.com
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