RU306C Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU306C
N-Channel Advanced Power MOSFET
Features
• 30V/5A,
RDS (ON) =30m (Typ.) @ VGS=10V
RDS (ON) =38m (Typ.) @ VGS=4.5V
RDS (ON) =110m (Typ.) @ VGS=2.5V
• Low R_{DS (ON)}
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Applications
• DC/DC Converter
• Load Switch
Pin Description
SOT23-3
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_A=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
T_A=25°C
I_D
P_D
②
R_JA
Continuous Drain Current(V_GS=10V)
T_A=25°C
T_A=70°C
Maximum Power Dissipation
T_A=25°C
T_A=70°C
Thermal Resistance-Junction to Ambient
Rating
30
±12
150
-55 to 150
1.3
①
20
5
3.8
1.25
0.8
100
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
www.ruichips.com