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| RU3040M2 Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU3040M2
N-Channel Advanced Power MOSFET
Features
⢠30V/40A,
RDS (ON) =5.8mΩ(Typ.)@VGS=10V
RDS (ON) =8.2mΩ(Typ.)@VGS=4.5V
RDS (ON) =16.8mΩ(Typ.) @VGS=2.5V
⢠Super High Dense Cell Design
⢠Fast Switching Speed
⢠Low gate Charge
⢠100% avalanche tested
⢠Lead Free and Green Devices Available (RoHS Compliant)
Applications
⢠Switching Application Systems
Pin Description
D D DD
SSS G
PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
IDâ¡
Continuous Drain Current@TA(VGS=10V)â¢
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TAâ¢
S
N-Channel MOSFET
Rating
Unit
TC=25°C
30
V
±10
150
°C
-55 to 150 °C
40
A
TC=25°C
160
A
TC=25°C
40
TC=100°C
25
A
TA=25°C
13
TA=70°C
11
TC=25°C
31
TC=100°C
13
W
TA=25°C
3.5
TA=70°C
2.3
Ruichips Semiconductor Co., Ltd
Rev. Aâ JUL., 2013
1
www.ruichips.com
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