RU2HE5L Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU2HE5L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/4.2A,
RDS (ON) =1Ω(tpy.)@VGS=10V
RDS (ON) =1.1Ω(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• DC/DC Converters
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Rating
200
±20
175
-55 to 175
4.2
①
16
②
4.2
3
40
20
3.75
10
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2011
www.ruichips.com