RU2HE2D Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU2HE2D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/1.2A,
RDS (ON) =0.95Ω (Typ.) @ VGS=10V
RDS (ON) =1Ω (Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Fast Switching
• Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management
• DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_A=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
T_A=25°C
I_D
Continuous Drain Current
T_A=25°C
T_A=70°C
P_D
②
R_θJA
Maximum Power Dissipation
T_A=25°C
T_A=70°C
Thermal Resistance-Junction to Ambient
Rating
200
±20
150
-55 to 150
1
4.5
①
1.2
0.9
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
www.ruichips.com