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RU2H30S Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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Features
⢠200V/30A,
RDS (ON) =75mΩ(Typ.) @ VGS=10V
⢠Ultra Low On-Resistance
⢠Fast Switching and Fully Avalanche Rated
⢠100% avalanche tested
⢠175°C Operating Temperature
⢠Lead Free and Green Available
Applications
⢠Switching Application Systems
⢠UPS
RU2H30S
N-Channel Advanced Power MOSFET
Pin Description
D
G
S
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
IDâ¡
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EASâ¢
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
200
V
±25
175
°C
-55 to 175 °C
30
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
120
A
30
A
23
176
W
88
0.85
°C/W
62.5
°C/W
81
mJ
Ruichips Semiconductor Co., Ltd
Rev. Aâ SEP., 2013
1
www.ruichips.com
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