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| RU20T8M7 Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU20T8M7
N-Channel Advanced Power MOSFET
Features
⢠20V/8A,
RDS (ON) =13mΩ(Typ.)@VGS=4.5V
RDS (ON) =14mΩ(Typ.)@VGS=4V
RDS (ON) =16mΩ(Typ.)@VGS=3.1V
RDS (ON) =18mΩ(Typ.)@VGS=2.5V
⢠Super High Dense Cell Design
⢠Fast Switching Speed
⢠ESD Protected
⢠100% avalanche tested
⢠Lead Free and Green Devices Available (RoHS Compliant)
Applications
⢠DC-DC Converters
⢠Power Management
Pin Description
G2S2S2
D1/D2
PIN1
G1S1S1 PIN1
SDFN2050
D1
D2
G1
G2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=4.5V)
IDâ¡
Continuous Drain Current@TA(VGS=4.5V)â¢
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TAâ¢
S1
S2
Dual N-Channel MOSFET
Rating
Unit
TC=25°C
20
V
±10
150
°C
-55 to 150 °C
28
A
TC=25°C
60
A
TC=25°C
28
TC=100°C
18
A
TA=25°C
8
TA=70°C
6.4
TC=25°C
25
TC=100°C
10
W
TA=25°C
1.7
TA=70°C
1.1
Ruichips Semiconductor Co., Ltd
Rev. Aâ MAY., 2013
1
www.ruichips.com
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