RU20P5E Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU20P5E
P-Channel Advanced Power MOSFET
Features
• -20V/-5A,
R_{DS (ON)} =50mΩ(Typ.)@V_GS=-4.5V
R_{DS (ON)} =65mΩ(Typ.)@V_GS=-3V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
SDG
Applications
• Load Switch
• Power Management
SOT89
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=-4.5V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA^{③ Thermal Resistance-Junction to Ambient}
Drain-Source Avalanche Ratings
E_AS^④
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
T_A=25°C
-20
V
±12
150
°C
-55 to 150 °C
-1.2
A
T_A=25°C
T_A=25°C
T_A=70°C
T_A=25°C
T_A=70°C
-20
A
-5
A
-3.9
1.25
W
0.8
10
°C/W
100
°C/W
56
mJ
Ruichips Semiconductor Co., Ltd
Rev. C– DEC., 2013
1
www.ruichips.com