RU20P3B Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET Super High Dense Cell Design

RU20P3B
P-Channel Advanced Power MOSFET
MOSFET
Features
• -20V/-3A,
RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
RDS (ON) =110mΩ (Typ.) @ VGS=-2.5V
• Low R_{DS (ON)}
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOT-23
Applications
• Power Management
• Load Switch
Absolute Maximum Ratings
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_A=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
T_A=25°C
I_D
P_D
②
R_θJA
Continuous Drain Current(V_GS=-4.5V) ^TA=25°C
T_A=70°C
Maximum Power Dissipation
T_A=25°C
T_A=70°C
Thermal Resistance-Junction to Ambient
Rating
-20
±12
150
-55 to 150
-1.2
①
-12
-3
-2.3
1
0.64
125
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com