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RU20E8H Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET
RU20E8H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/8.8A,
RDS (ON) =12mΩ (Typ.) @ VGS=10V
RDS (ON) =15mΩ (Typ.) @ VGS=4.5V
RDS (ON) =21mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management
• Converters
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
3
①
34
8.8
7
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2011
www.ruichips.com