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RU205B Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Super High Dense Cell Design
RU205B
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/5A,
RDS (ON) =30mΩ (Typ.) @ VGS=4.5V
RDS (ON) =38mΩ (Typ.) @ VGS=2.5V
• Low RDS (ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
SOT-23
Applications
• Load Switch
• PWM Applications
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=4.5V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
1.25
①
20
5
4
1
0.64
125
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2012
www.ruichips.com