RU1HP55R Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU1HP55R
P-Channel Advanced Power MOSFET
Features
• -100V/-55A,
R_{DS (ON)} =40mΩ(Typ.)@V_GS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Inverters
Pin Description
G _{D S TO220}
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
V_GSS
T_J
T_STG
I_S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_JC
Thermal Resistance-Junction to Case
R_JA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
T_C=25°C
-100
V
±25
175
°C
-55 to 175 °C
-55
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
-220
-55
-39
176
88
0.85
62.5
A
A
W
°C/W
°C/W
400
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com