RU1HP25S Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU1HP25S
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-25A,
RDS (ON) =40mΩ(tpy.)@VGS=-10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-263
Applications
• Inverters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=-10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Rating
-100
±20
175
-55 to 175
-25
①
-100
②
-25
-19
79
39.5
1.9
132
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUN., 2012
www.ruichips.com