RU1HC2H Datasheet, PDF (1/12 Pages) Ruichips Semiconductor Co., Ltd – Complementary Advanced Power MOSFET

RU1HC2H
Complementary Advanced Power MOSFET
MOSFET
Features
• N-Channel
100V/3.5A,
RDS (ON) =75mΩ (Type) @ VGS=10V
RDS (ON) =80mΩ (Type) @ VGS=4.5V
• P-Channel
-100V/-2.5A,
RDS (ON) =155mΩ (Type) @ VGS=-10V
RDS (ON) =175mΩ (Type) @ VGS=-4.5V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Applications
• Power Management in Notebook
Computer.
Pin Description
SOP-8
Absolute Maximum Ratings
Complementary MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
I_S
Storage Temperature Range
Diode Continuous Forward Current T_C=25°C
Mounted on Large Heat Sink
I_DP
I_D
P_D
②
R_θJA
300μs Pulse Drain Current Tested T_C=25°C
Continuous Drain Current
Maximum Power Dissipation
T_C=25°C
T_C=70°C
T_C=25°C
T_C=70°C
Thermal Resistance-Junction to Ambient
N -Channel P Channel
100
±20
150
-55 to 150
3.5
-100
±20
150
-55 to 150
-2.5
①
14
①
-10
3.5
-2.5
2.9
-2
2
1.3
62.5
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
www.ruichips.com