RU1H36L Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Super High Dense Cell Design

RU1H36L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/32A,
RDS (ON) =34mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-252
Applications
• DC-DC Converters
• Synchronous Rectifier
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
T_C=25°C
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
Rating
100
±20
175
-55 to 175
32
①
128
32
23
71
36
2.1
Unit
V
°C
°C
A
A
A
W
W
°C/W
64
mJ
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