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RU1H130Q Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU1H130Q
N-Channel Advanced Power MOSFET
Features
â¢100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
⢠Super High Dense Cell Design
⢠Ultra Low On-Resistance
⢠100% avalanche tested
⢠Lead Free and Green Devices Available (RoHS Compliant)
Applications
⢠High Efficiency Synchronous Rectification in SMPS
⢠High Speed Power Switching
Pin Description
G
D
S
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
IDâ¡
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EASâ¢
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
V
±25
175
°C
-55 to 175 °C
130
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
520
A
130
A
92
312
W
156
0.48
°C/W
50
°C/W
552
mJ
Ruichips Semiconductor Co., Ltd
Rev. Aâ NOV., 2013
1
www.ruichips.com
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