RU1H100R Datasheet, PDF (1/11 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU1H100
N-Channel Advanced Power MOSFET
Features
• 100V/75A
RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
Pin Description
TO-220
TO-220F
TO-247
TO-263
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300µs Pulsed Drain Current Tested
I_D
Continue Drain Current
P_D
Maximum Power Dissipation
RθJC
Thermal Resistance -Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
StoragEe^AST^②emperatAuvrealaRnacnhgeeEnergy ^{,Single Pulsed}
-55 to 150
TC=25°C
T_C=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±25
175
-55 to 175
①
75
300
①
75
59
200
100
0.75
62.5
400
Unit
V
°C
°C
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com