RU190N08S Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU190N08S
N-Channel Advanced Power MOSFET
Features
· 80V/190A
RDS (ON)=3.9mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-263
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300µs Pulsed Drain Current Tested
I_D
Continue Drain Current
P_D
Maximum Power Dissipation
RθJC
Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy ,Single Pulsed
N-Channel MOSFET
Rating
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
80
±25
175
-55 to 175
①
190
②
700
①
190
①
140
312
156
0.48
1225
Unit
V
°C
°C
A
A
W
°C/W
mJ
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
www.ruichips.com