RU190N08R Datasheet, PDF (1/11 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU190N08
N-Channel Advanced Power MOSFET
Features
· 80V/190A
RDS (ON)=3.9mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-220
TO-263
TO-220F
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
I_DP
300µs Pulsed Drain Current Tested
I_D
Continue Drain Current
P_D
Maximum Power Dissipation
RθJC
Thermal Resistance -Junction to Case
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
Rating
Unit
80
±25
175
-55 to 175
190
①
700
②
190
140
400
220
0.45
62.5
2000
V
°C
°C
A
A
W
°C/W
mJ
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