RU16P8M4 Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET

RU16P8M4
P-Channel Advanced Power MOSFET
Features
• -16V/-8A,
R_{DS (ON)} =40mΩ(Typ.)@V_GS=-4.5V
R_{DS (ON)} =65mΩ(Typ.)@V_GS=-2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Swtich
• Battery Charge
• DC/DC Converters
Pin Description
G
D
S
D
D
PIN1
S
D
D
SDFN2020
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
Continuous Drain Current@T_C(V_GS=-4.5V)
I_D^②
Continuous Drain Current@T_A(V_GS=-4.5V)^③
Maximum Power Dissipation@T_C
P_D
Maximum Power Dissipation@T_A^③
S
P-Channel MOSFET
Rating
Unit
T_C=25°C
-16
V
±12
150
°C
-55 to 150 °C
-14
A
T_C=25°C
-56
A
T_C=25°C
-14
T_C=100°C
-9
A
T_A=25°C
-8
T_A=70°C
-5.6
T_C=25°C
17.8
T_C=100°C
7.1
W
T_A=25°C
2.5
T_A=70°C
1.6
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com