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| CAS100H12AM1 Datasheet, PDF (1/7 Pages) Cree, Inc – 1200V, 100A Silicon Carbide Half-Bridge Module | |||
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CAS100H12AM1
1200V, 100A Silicon Carbide
Half-Bridge Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
⢠Ultra Low Loss
⢠High Ruggedness
⢠High-Frequency Operation
⢠Zero Reverse Recovery Current from Diode
⢠Zero Turn-off Tail Current from MOSFET
⢠Positive Temperature Coefficient on VF and VDS(on)
System Benefits
⢠Enables compact and lightweight systems
⢠High efficiency operation
⢠Mitigate over-voltage protection
⢠Ease of transistor gate control
⢠Reduces thermal requirements
Applications
⢠High Power Converters
⢠Motor Drives
⢠Solar Inverters
⢠UPS and SMPS
⢠Induction Heating
Package
VDS 1200 V
ID (TC= 100ËC) 100 A
RDS(on)
16 mâ¦
Part Number
Package
Marking
CAS100H12AM1 Half-Bridge Module CAS100H12AM1
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
TJ
Junction Temperature
TC ,TSTG
Visol
Case and Storage Temperature Range
Case Isolation Voltage
LStray
Stray Inductance
M
Mounting Torque
G
Weight
Clearance Distance
Creepage Distance
1200
-5/+20
165
105
400
150
V
V
VGS = 20V, TC=25ËC
A
VGS = 20V, TC=100ËC
A
Pulse width tP = 1ms
Limited by Tjmax,TC = 25ËC
ËC
-55 to +125 ËC
6000
<15
2.94
200
12.2
17.3
20.2
V AC, t=1min
nH
Measured along maximum path from
pad to Lug
Nm
g
mm Terminal to terminal
mm Terminal to terminal
mm Terminal to base plate
Subject to change without notice.
www.cree.com
Notes
1
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