VL415-5-15 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – violet light emitting diode

VL415-5-15
v 2.0 06.06.2014
Description
VL415-5-15 is a InGaN based Light Emitting Diode with a typical peak wavelength of 415 nm and
radiation of 10-16 mW. It is mounted on a lead frame and encapsulated in a 5 mm clear UV-resistant
epoxy resin, which provides a viewing angle of 15°.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Allowable Reverse Voltage
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty ≤ 1/10, pulse width ≤ 10 ms
*² must be completed within 5 seconds
PD
IF
IFP
IR
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
80
20
100
50
+ 85
+ 100
+ 250
Unit
mW
mA
mA
mA
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Symbol Conditions
Peak Wavelength *¹
λP
Half Width
∆λ
Forward Voltage *²
VF
Radiated Power *³
PO
Reverse (Leakage) Current
IR
Viewing Angle
φ
*¹ measurement allowance is ±2 nm
*² measurement allowance is ±0.2 V
*³ measurement allowance is ±10 %
IF=20mA
IF=20mA
IF=20mA
IF=20mA
VR=5V
IF=20mA
Min.
410
3.2
10
Values
Typ.
415
15
Max.
420
4.2
16
50
Unit
nm
nm
V
mW
µA
deg.
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