VL410-EMITTER Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – uv high power led

VL410-EMITTER
v 1.0 27.05.2014
Description
VL410-EMITTER is a InGaN based, High Power UV single chip LED with a typical peak wavelength of
410 nm and radiation of 300-400 mW. It comes in standard emitter package, containing SI Zener diode
for ESD protection, with Au soldering pins, Au plating copper heat sink, and molded with silicone resin.
Maximum Ratings (T_CASE=25°C)
Parameter
Symbol
Power Dissipation
Forward Current
Pulse Forward Current *¹
Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Lead Solder Temperature *²
*¹ duty=1%, pulse width = 10 µs
*² must be completed within 5 seconds
PD
IF
IFP
VF
TJ
TCASE
TSTG
TSLD
Min.
- 40
- 40
Values
Max.
1300
350
500
5
125
+ 105
+ 120
+ 260
Unit
mW
mA
mA
V
°C
°C
°C
°C
Electro-Optical Characteristics (T_CASE=25°C)
Parameter
Peak Wavelength *¹
Forward Voltage *²
Radiated Power *³
Viewing Angle
*¹ measurement allowance: ±1 nm
*² measurement allowance: ±10%
*³ measurement allowance: ±0.1 V
Symbol Conditions
λP
IF=350mA
VF
IF=350mA
PO I_F=350mA
φ
IF=100mA
Min.
405
3.0
300
Values
Typ.
140
Max.
415
4.0
400
Unit
nm
V
mW
deg.
Device Materials
Item
Material
Foundation
Lens
Electrodes
Lead Frame *
Plastic
Silicone Resin
Au
Au Plating Copper Alloy
* may be connected to Anode or Cathode
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