UVLUX335-3 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – Deep Ultraviolet Light Emission Source

v2 07/14
UVLUX335-3
► Deep Ultraviolet Light Emission Source
► 340 nm, 1-3 mW
► 4 chip LED array
►
UV-Curing, Optical Sensing
Description
UVLUX335-3 is a series of AlGaN based deep UV multi chip LED arrays, utilizing 4 parallel connected chip dies, with a typical peak
wavelength of 340 nm and optical output power of 1-3 mW. It comes in hermetically sealed TO39 metal can package with
hemispherical lens or flat glass window. UVLUX335-3 is widely used for UV-curing, phototherapy, optical sensing and imaging of
dyes, inks and markers.
Maximum Rating (TCASE = 25°C)
Parameter
Symbol
Values
Min.
Max.
Power Dissipation, DC*
PD
600
Forward Current (TA=25°C)
IF
80
Operating Temperature
TOPR
- 30
+ 55
Storage Temperature
TSTG
- 30
+ 100
Soldering Temperature
TSOL
+ 190
* Maximum dissipated power must not exceed 200mW without thermal management
Unit
mW
mA
°C
°C
°C
Electro-Optical Characteristics (TCASE = 25°C, IF = 80 mA)
Parameter
Symbol
Peak Wavelength^*1
Spectral Width (FWHM)
Forward Voltage^*2
Radiated Power^*3
Beam Angle (hemispherical lens)
Beam Angle (flat window)
*¹wavelength measurement tolerance: ± 2 nm
*²forward voltage measurement tolerance: ± 2 %
*³output power measurement tolerance: ± 10 %
λP
∆λ
VF
PO
2Ó¨1/2
2Ó¨1/2
Values
Min. Typ.
335 340
15
4.5
1
20
120
Max.
345
20
6.5
3
Unit
nm
nm
V
mW
deg.
deg.
Electrical Connection
Pin #
Pin 1
Pin 2
Pin 3
Function
Anode
Cathode
Case
Bottom view:
Electrical layout:
www.roithner-laser.com
1