SSO-ADH-1100-TO8P Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – APD with Peltier - Cooler

SSO-ADH-1100-TO8P
APD with Peltier - Cooler
Special characteristics
The SSO - AD - 1100 - TO8P is a thermoelectrically
cooled APD with chip specially selected for low dark
current and low "dark count rate". Applications include
photon counting and other low light level sensing.
Active area
Dark current selection
(M=100)
Total capacitance
(M=100)
Break down voltage UBR
1,0 mm²
∅ 1100 µm ¹⁾
typ. 5 nA
max. 10 nA
typ. 10 pF
typ. 160 V ²⁾
Temperature coefficient of UBR
typ. 0,35 %/°C
Spectral responsivity at 780 nm
Cut-off frequency
(-3dB)
Rise time
min. 0,40 A/W
typ. 0,45 A/W
typ. 0,35 GHz
typ. 1 ns ³⁾
Optimum gain
(conventional AC - mode)
"Excess Noise" factor
(M=40, no cooling
N.E.P.
(M=100, 880 nm, no cooling)
Single stage Peltier-cooler
∆T (in ca. 20 sec)
Peltier parameters
Temperature sensor AD - 590
40 ... 60
typ. 2,2
typ. 8 * 10^-14 W/Hz^½
typ. 50 K
min. 45 K
Imax = 0,80 A
Vmax = 3,87 V
1 mV / K ⁴⁾
Package standard TO8
with 12 pins
pin 1
pin 3
pin 4
pin 5
pin 6
pin 8
pin 9
pin 2, 7, 10, 11, 12
fully hermetic
Anode APD
Cathode APD
Peltier-cooler -
Package
Peltier-cooler +
V+ T-Sensor
V- T-Sensor
n.c.
Measuring conditions:
1) also available with Chip SSO - AD - 2500
2) Gain = 100, photo current 1 nA (Ip0 = 10 nA)
Setup of Break down voltage between
80 V and 350 V is possible during processing
3) 10 - 90 %, Gain = 100, 50 Ω, λ = 810 nm
4) at series resistance of 1 kΩ and bias voltage of 5 V