SSO-AD-500NIR-TO52 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Avalanche Photodiode NIR

SSO-AD-500 NIR-TO52
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency >80% at ! 760-910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
Active area
dark current ¹⁾
(M=100)
Total capacitance ¹⁾
(M=100)
Break-down voltage UBR
(at ID=2µA)
Temperature coefficient of UBR
Spectral responsivity
(at 905 nm)
Cut-off frequency
(-3dB)
Rise time
Optimum gain
905 nm
655 nm
905 nm
655 nm
Gain M
0,196 mm²
∅ 500 µm
max. 5 nA
typ. 0,5 - 1 nA
typ. 1,2 pF
120 - 300 V
typ. 0,55 %/°C
min. 0,55 A/W
typ. 0,60 A/W
400 MHz
550 MHz
550 ps
300 ps
50 - 60
min 200
"Excess Noise" factor
(M=100)
"Excess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
typ. 2,5
typ. 0,2
typ. 1 pA/Hz^½
typ. 2 * 10^-14 W/Hz^½
-20 ... +70°C
-60 ... +100°C
1) measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880 nm, 80 nm bandwith).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage
Package 2 (TO52) :