SSO-AD-1900-TO5I Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Avalanche Photodiode

SSO-AD-1900-TO5i
SSO-AD-2500-TO5i
Avalanche Photodiode
Special characteristics:
High gain at low bias voltage
Fast rise time
1900 or 2500 µm diameter active area
low capacitance
Parameters:
SSO-AD-1900
TO5i
active area
dark current ¹⁾
(M=100)
Total capacitance ¹⁾
(M=100)
Break-down voltage UBR
(at ID=2µA)
Temperature coefficient
of UBR
1950 mm²
∅ 3,0 µm
typ. 10,0 nA
typ. 20 pF
160 V
typ. 0,4 %/°C
SSO-AD-2500
TO5i
2520 mm²
∅ 5,0 µm
typ. 20,0 nA
typ. 40 pF
160 V
typ. 0,4 %/°C
Spectral responsivity
(at 780 nm)
Cut-off frequency
(-3dB)
Rise time
Gain M
typ. 0,45 A/W
typ. 0,18 GHz
typ. 1,3 ns
100
typ. 0,45 A/W
typ. 0,27 GHz
typ. 2 ns
100
"Excess Noise" factor
(M=100)
"Excess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
typ.
typ.
typ.
1,5 * 10^-13 W/Hz^½
-20 ... +70°C
-60 ... +100°C
typ. pA/Hz^½
typ.
3 * 10^-13 W/Hz^½
-20 ... +70°C
-60 ... +100°C
1) measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a NIR-LED
(880 nm, 80 nm bandwith).
Rise of the photo current up to 1 µA, (M=100) by internal multiplicati-
on due to an increasing bias voltage.
Package 3a (TO5i) :