SSO-AD-1100-TO5I Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Avalanche Photodiode

SSO-AD-1100-TO5i
Avalanche Photodiode
Special characteristics
High gain at low bias voltage
Fast rise time
1130 µm diameter active area
low capacitance
Parameters:
active area
dark current ¹⁾
(M=100)
Total capacitance ¹⁾
(M=100)
Break down UBR ²⁾
(at ID=2µA)
Temperature coefficient of UBR
Spectral responsivity
at 780 nm
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
1,0 mm²
∅ 1130m
max. 6 nA
typ.10 pF
typ. 160 V
typ. 0,4 %/°C
typ. 0,45 A/W
typ. 0,35 GHz
typ. 1 ns
40 – 60
typ. 100
Package 3 (TO5i) :
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
typ. 2,2
typ. 0,2
typ. 8 * 10^-14 W/Hz^½
-20 ... +70°C
-60 ... +100°C
1) measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880nm, 80nm bandwidth).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
2) limited UBR range possible to agree